I have graduated at Aarhus University. My major is Solid State Physics, and in my thesis I have written about the new AlAs:N alloy by inducing a small amount of nitrogen (N). AlAs1-xNx alloy induced by a small amount of N is interesting like GaAs1-xNx which can be tuned to have the extended wavelength range that can be covered by optoelectronic devices. The band gap of AlAs1-xNx alloy cannot be brought down under 1 eV as it is the case with GaAs:N alloy. It is due to the big band gap of AlAs (3.13 eV) at G. The new AlAs:N material is a supplement to GaAs:N alloy which we can use to make red laser and red LED diodes.
The semiconductors are the materials conducting current, but not as effective as metals and superconductors. Some of them like GaN, Si, Ger, GaAs v.v. are used in industries to make electronic components for pc, laser, DVD player, solar cells and so forth with low costs.
Name: Tung Thanh Le Address: Maglegårds Alle 36, 2. th. 2860 Søborg
Denmark Date of Birth: 9 of May 1975 Birth Place: Saigon/Vietnam E-mail: tungthanhle75@gmail.com Cell Phone: +45 50271522
